Wide-bandgap (WBG) power semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) enable improved power conversion efficiencies. The improved power density that they provide ...

The expanded Power-Thru™ gate driver portfolio simplifies SiC power design for AI data centers and electric vehicles (EVs). This new offering streamlines power conversion design by removing the need ...

AI workloads consuming 1.5 kW per chip—with projections reaching 4-5 kW—are forcing a fundamental shift in data center power architectures. The challenge is no longer just capacity, but delivery.

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SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...

Wolfspeed announced Toyota will deploy its automotive-grade SiC MOSFETs to power onboard charging across its BEV lineup. While SiC is already well known for enabling fast switching, high efficiency, ...

Planar, trench, and TAP technologies all have a place in the industry in terms of cost, lifetime, high-voltage performance, and efficiency. The struggle to develop the ideal candidate technology for ...

The new wafer fab introduces advanced GaN and SiC manufacturing, positioning Malaysia to enter front-end semiconductor production for the first time. CHIPX, an emerging next-generation semiconductor ...

1,500-V utility solar string inverters are being widely adopted due to their high cost and efficiency benefits compared with the older, 1,000-V systems. Central inverters perform power conversion ...

NTT, Inc. has demonstrated amplification of high-frequency wireless signals using aluminum nitride (AlN)–based transistors. NTT, Inc. has achieved a world first by demonstrating amplification of ...