Abstract: A low-temperature annealing process for 4H-SiC/SiO2 stack in O2 ambient was found to annihilate the positive fixed charges induced by the interface nitridation process effectively, while ...
Abstract: The feasibility of a permittivity-graded epoxy insulator with a low coefficient of thermal expansion (CTE) was clarified by evaluating the dielectric and thermomechanical properties of ...
† † MOE Key Laboratory of Spectrochemical Analysis & Instrumentation, Key Laboratory for Chemical Biology of Fujian Province, Collaborative Innovation Center of Chemistry for Energy Materials, ...
Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhaba National Institute, 1/AF Bidhannagar, Kolkata 700064, India ...
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