Abstract: In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to ...
Abstract: To study the thickness uniformity of TiN in FinFETs, the electrical characteristics and reliability of n-FinFETs with ALD TiN and PVD TiN as barrier layer are investigated. Despite almost ...
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