Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...
Abstract: The implementation of vertically stacked gate-all-around nanosheet FET (GAA NSFET) may help improve the performance of static random access memory (SRAM) for the design flexibility with ...
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