Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: We present a miniaturized and laminated metamaterial (MM) block, which is formed using an extremely compact stacked unit cell consisting of a double-layer spiral connected in series with a ...
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