Abstract: Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the ...
Abstract: We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN ...
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