Depending on the position, the summer job can last for max. 3 months and is carried out between May and August 2026. Please note that these positions are available for Bachelor's and Master's students ...
Abstract: We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN ...
Abstract: Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the ...
Abstract: Time-series datasets used in machine learning applications often are small in size, making the training of deep neural network architectures ineffective. For time series, the suite of data ...
In this paper, we propose a fully end-to-end algorithm FD-GAN for image dehazing. Moreover, we develop a novel Fusion-discriminator which can integrate the frequency information as additional priors ...