Abstract: This paper proposes a gate-oxide Time-Dependent Dielectric Breakdown (TDDB) evaluation system for SiC power devices under switching operation conditions. A constant voltage High-Temperature ...
Abstract: Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an ...
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