Abstract: In this paper, we provide a comprehensive review of our studies on the metal–organic-vapor-phase-epitaxial (MOVPE) growth of AlGaN directly on reactive-ion-etched (RIE) GaN surfaces and its ...
Abstract: As the semiconductor industry moves to the advanced technology nodes, the process micro-loading in reactive ion etch (RIE) becomes more and more severe. It is critical to control ...
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