Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: Within the expanding domain of electrical power demand, the future of power module packaging is entwined with the progress of (ultra) wide bandgap [(U)WBG] materials. These materials, such ...
A dealership's rating is based on all of their reviews, with more weight given to recent reviews. Includes reviews of Excel Auto Lounge from DealerRater. Want to share your experience with this ...
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