Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: To achieve the uncertainty requirement of 0.25dB for antenna gain measurement in the communication industry standard (YD/T 2868–2020), the three-antenna extrapolation technique is used to ...
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