IEEE

Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature

Abstract: Silicon carbide (SiC) ultraviolet (UV) phototransistors with normal operation up to 550 °C were fabricated and analyzed in this article. Under 280 nm UV illumination, the responsivity has ...
IEEE

A 4H-SiC n-p-n Phototransistor With On-Line Temperature Monitoring Characteristic

Abstract: Aiming for the temperature drift phenomenon of SiC phototransistor during ultraviolet detection process, the p-n junction is integrated into the 4H-SiC n-p-n phototransistor chip to enable ...
C&EN

Boosting Responsivity of Organic–Metal Oxynitride Hybrid Heterointerface Phototransistor

† ‡ † Department of Materials Science and Engineering, ‡ California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States § The Division of ...
C&EN

Chiral Diketopyrrolopyrrole-Based Conjugated Polymers with Intramolecular Rotation–Isomeric Conformation Asymmetry for Near-Infrared Circularly Polarized Light-Sensing ...

Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea ...