The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
The drive to reduce fuel consumption and CO 2 emissions by automobile manufacturers worldwide is clearly aided by the electrification of accessories and powertrains alike. Such developments become ...
International Rectifier has introduced the IRF4000, a 100-V-rated device integrating four HEXFET MOSFETs into a single Power MLP package for Power-over-Ethernet (PoE) applications. The new device ...
The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...
LEM and Semikron Danfoss have teamed up to monitor current in automotive silicon carbide power mosfet modules. The result is ‘Nano’, a current sensor that is compatible with Semikron’s DCM SiC power ...
Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
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