Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...
When designing a product portfolio with a wide range of voltage and power requirements, finding a single driver design solution to serve the full portfolio can deliver significant savings in time and ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...
If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...
NTC temperature readout improves accuracy, increasing reliability and module utilization by up to 30 percent SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate ...
In power electronics, for example, as found in drive technology, insulated gate bipolar transistors (IGBTs) are frequently used for high-voltage and high-current switching. These power transistors are ...
Legacy designs of variable frequency drives (VFDs) used optocouplers or pulse transformers for isolation and mated them together with gate driver ICs. A more integrated approach, though, uses ...
The power electronics industry is poised to undergo significant change, as ultra-fast-transition transistors made from silicon carbide (SiC) and gallium nitride (GaN) have recently emerged. These ...
The latest trends in electric vehicle and industrial power systems demand higher voltage operation and greater efficiency, but also greater safety of power system devices, write Vikneswaran ...
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